|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
Triple-Halfbridge Driver with Serial Peripheral Interface I/O TLE 6208-3 G M M AES02541 Figure 1 Features * * * * * * * * * * * * * * * * Three High-Side and three Low-Side-Drivers already connected as half-bridges Optimized for DC motor management applications 0.6 A continuous, 1.5 A peak current per switch RDS ON; typ. 0.8 , @ 25 C per switch Output: short circuit protected and diagnosis Overtemperature-Protection with hysteresis and diagnosis Standard SPI-Interface/Daisy chain capable Interfaces directly to microcontroller using SPI Protocol SPI communication for control and fault reporting Serial operation is guaranteed to 1 MHz Full compatibility to the TLE 5208-6G with six highside and six lowside switches Very low current consumption (typ. 20 A, @ 25 C) in stand-by (inhibit) mode Over- and Undervoltage-Detection Over- and Undervoltage-Lockout CMOS/TTL compatible inputs with hysteresis Small enhanced power P-DSO-14 Package 1 Application Note 1998-04-01 Semiconductor Group TLE 6208-3 G Table of Contents 1 1.1 1.2 1.3 2 3 3.1 3.2 4 4.1 4.2 5 6 7 Page Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 I/O-Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Functions of the TLE 6208-3 G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Output Driver Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Low-side Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 High-side Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Programming the TLE 6208-3 G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Control Word . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Status Word . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 Application Board and Control Software . . . . . . . . . . . . . . . . . . . . . . . . .21 Further Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 Semiconductor Group 2 Application Note 1998-04-01 TLE 6208-3 G 1 1.1 Circuit Description Introduction The TLE 6208-3 G was conceived, specified, designed and developed for automotive applications, but is well suited for other environments. The TLE 6208-3 G is a full protected triple halfbridge driver with a 16 bit serial peripheral interface I/O. The device incorporates the Siemens power technology SPT which allows CMOS logic, bipolar/MOS analog circuitry, and DMOS power MOSFETs existing on the same monolithic circuitry. Many benefits are realized as a direct result of using this mixed technology. A simplified block diagram of the TLE 6208-3 G is shown in Figure 2. V CC 11 INH 10 VS 3 13 OUT 1 CSN 4 Microcontroller with Bus CMOS Input Logic DI 5 CMOS Serial Shift Registers and Latches Open source highside switches and open drain lowside switches and sense circuits M1 12 OUT 2 M2 2 OUT 3 CLK 6 DO 9 1,7,8,14 GND AEB02532 Figure 2 Simplified Application In motion control up to two actuators (DC-motors) can be connected to the three halfbridge-outputs (cascade configuration) due to the three possible states of the halfbridges (high, low and tristate). This tristate functionality for motor halfbridges saves a complete halfbridge driver in the case of "multimotor applications", since the motors can simply be connected in series. Operation modes forward (cw), reverse (ccw), brake and high impedance are controlled from a standard serial peripheral interface (SPI). Semiconductor Group 3 Application Note 1998-04-01 TLE 6208-3 G 1.2 I/O-Interface The TLE 6208-3 G directly interfaces to an microcontroller and operates at system clock serial frequencies in excess of 1.0 MHz using a synchronous peripheral interface (SPI) for control and diagnostic readout. Microcontroller MCU Shift Register TLE 6208-3G MTSR MOSI MRST MISO SCLK CLK To Logic INH CSN AES02533 DI Shift Register DO Receive Buffer Parallel Ports Figure 3 SPI Interface with Microcontroller The SPI system is flexible enough to communicate directly with numerous standard peripherals. SPI reduces the number of pins necessary for input/output (I/O) on the TLE 6208-3 G. It also offers an easy means of expanding the I/O function using few MCU pins. The SPI system of communication consists of the MCU transmitting, and in return, receiving one databit of information per clock cycle. The MCU acts as Master and the TLE 6208-3 G acts as Slave. So Databits are simultaneously transmitted by one pin, Master Transmit Slave Receive (MTSR) respectively Master Out Slave In (MOSI). The data is received by another pin, Master Receive Slave Transmit (MRST) respectively Master In Slave Out (MISO). Some features of SPI are: * Full Duplex, that means a three-wire synchronous Data Transfer from and to the device at the same time * Provides Write Collision Flag Protection on MCU * Provides End of Message Interrupt Flag on MCU * Three I/Os associated with SPI (MTSR, MRST, SCLK) One main advantage of the TLE 6208-3 G is the serial port which when coupled to an MCU, receives "on/off" commands from the MCU and in return transmits the status of the Semiconductor Group 4 Application Note 1998-04-01 TLE 6208-3 G device's outputs. Many devices can be "daisy-chained" together to form a larger system as shown in Figure 4. Note in this example that only one dedicated parallel port (aside from the required SPI) is needed for chip select to control a larger number of possible loads. Due to the compatibility the TLE 5208-6G can also be a member of the daisy-chain. SCLK Parallel Port CSN DO CLK DI CSN DO CLK DI CSN DO CLK DI CSN DO CLK DI Microcontroller with SPI MISO MRST TLE 6208-3G 3 Half-Bridges TLE 6208-3G 3 Half-Bridges TLE 5208-6G 6 Highside and 6 Lowside Switches TLE 6208-3G 3 Half-Bridges MOSI MTSR AES02534 Figure 4 TLE6208-3G SPI System Daisy Chain Multiple TLE6208-3G devices can also be controlled in a parallel input fashion using SPI. Figure 5 shows the possibility to run 6 Halfbridges being controlled by only two dedicated parallel MCU ports used for chip select. MISO MRST DO DI TLE 6208-3G 3 Half-Bridges SCLK Microcontroller with SPI MOSI MTSR Parallel Port A0 A1 CLK CSN DO DI TLE 6208-3G CLK CSN AES02535 3 Half-Bridges Figure 5 Parallel I/O SPI Control 5 Application Note 1998-04-01 Semiconductor Group TLE 6208-3 G The only drawbacks of SPI are that the MCU is required for efficient operational control and, in contrast to parallel input control, is slower but still sufficient at performing pulse width modulating (PWM) functions. 1.3 Power Stages The IC is protected against short-circuits and overtemperatures. The SPI interface allows full diagnosis of overload and underload, overvoltage and undervoltage. In the event of serious overheating, the IC sends an overtemperature warning signal, so that the intelligent control system can intervene to reduce the dissipated power accordingly. This additional feature is designed for applications with increased safety requirements. It is also possible to mask the overload current shut down threshold via software, so that power-on current spikes such as those occurring with motor loads can be managed. The overvoltage shutdown can likewise be disabled via software. This means that the IC can also be used for industrial electronics with supply voltages up to 40 V. The TLE 6208-3 G has a separate inhibit input for standby running if required (or as a "safety disable"), which switches the module into sleep mode with an extremely low current consumption of less than 10 A. The TLE 6208-3 G is specified over a temperature range of - 40 C < Tj < 150 C and 8 V < VS < 40 V supply. All of these functions are incorporated in a small P-DSO-14 surface mount plastic package, thanks to the latest Siemens Power Technology (SPT4). The special leadframe design "enhanced power" reduces thermal resistance to such an extent that intelligent distribution of dissipated power allows all loads to be handled simultaneously on the driver chip. In summary: the TLE 6208-3 G provides a technically elegant and very cost effective solution for a wide range of automotive and industrial applications. Semiconductor Group 6 Application Note 1998-04-01 TLE 6208-3 G 2 Functions of the TLE 6208-3 G Figure 6 shows a block schematic diagram of the IC. V CC 11 Bias Charge Pump VS DRV1 3 13 OUT 1 INH 10 Inhibit FaultDetect CSN DI CLK DO 4 5 6 9 SPI 16 Bit Logic and Latch DRV2 12 OUT 2 UV OV TSD >1 DRV3 2 OUT 3 1,7,8,14 GND AEB02439 Figure 6 Block Schematic Diagram of the TLE 6208-3 G There are three halfbridge drivers on the right-hand side. A highside driver and a lowside driver are combined to form a halfbridge driver in each case. The drivers communicate via the internal data bus with the logic and the other control and monitoring functions: undervoltage (UV), overvoltage (OV), overtemperature (TSD), charge pump and fault detect. Semiconductor Group 7 Application Note 1998-04-01 TLE 6208-3 G Two pins are provided for supply to the IC: All power drivers are connected to the supply voltage VS. This supply voltage is monitored by overvoltage and undervoltage comparators with hysteresis, so that the correct function can be checked in the application at any time. The logic is supplied by the VCC voltage, typ. with 5 V. The VCC voltage uses an internally generated Power-on Reset (POR) to initialize the IC at power-on. The advantage of this system is that information stored in the logic remains intact in the event of short-term failures in the supply voltage VS. The system can therefore continue to operate following VS undervoltage, without having to be reprogrammed. The "undervoltage" information is stored, and can be read out via the interface. The same logically applies for overvoltage. "Interference spikes" on VS are therefore effectively suppressed. The situation is different in the case of undervoltage on the VCC connection pin. If this occurs, then the internally stored data is deleted, and the output levels are switched to high-impedance status (tristate). The IC is initialized by VCC following restart (Power-on Reset = POR) The 16-bit wide programming word or control word is read in via the DI data input, and this is synchronized with the clock input CLK. The status word appears synchronously at the DO data output. The transmission cycle begins when the chip is selected with the CSN input (H to L). If the CSN input changes from L to H then the word which has been read in becomes the control word. The DO output switches to tristate status at this point, thereby releasing the DO bus circuit for other uses. The INH inhibit input can be used to switch the IC in stand-by mode. This reduces the current consumption to just a few A, and results in the loss of any data stored. The output levels are switched to tristate status. The module is reinitialized with the internally generated POR (Power-on Reset) at restart. This feature allows the use of this module in battery-operated applications (vehicle body control applications). Semiconductor Group 8 Application Note 1998-04-01 TLE 6208-3 G Figure 7 shows an overview of the chip layout. Figure 7 The TLE 6208-3 G Chip The chip layout is explained from left to right. There are three lowside power switches on the left-hand side followed by the three highside switches. Three temperature sensors are located in the output stages to detect the overtemperature. The drivers for the highside and the lowside switches are followed by the shift register of the SPI interface and the Start-Up circuitry. The analog circuitries for the 350 s delay, internal supply, charge pump and regulator, and monitoring which are sensitive to temperature gradients (e.g. the bandgap reference) are located at the right side of the chip, i.e. the farthest possible from the power stages. Semiconductor Group 9 Application Note 1998-04-01 TLE 6208-3 G 3 Output Driver Levels Every driver block from DRV 1 to 3 contains a low-side driver and a high-side driver. The outputs are internally connected to form a halfbridge. VS HS-Driver 1/3 TLE 6208-3G OUT 1 to 3 M Full-bridge motor control; motors connected in series; (saves a complete halfbridge driver) AES02536 LS-Driver GND Figure 8 A Highside and a Lowside Switch Are Building the Halfbridge TLE 6208-3 G When commutating inductive loads, the dissipated power peak can be significantly reduced by activating the transistor located parallel to the internal freewheeling diode. A special, integrated "timer" for power ON/OFF times ensures there is no crossover current at the halfbridge. Semiconductor Group 10 Application Note 1998-04-01 TLE 6208-3 G 3.1 Low-side Driver The following detailed block schematic diagrams of the output levels are provided for further clarification. The low-side driver connection is shown in Figure 9. To Source of Highside Switch Input Output Switch-ON-Delay Gate Status Over Current Open Load 25 s Delay + GND Internal Supply LS-Driver Current Limit + MOC MOL MOUT OUT 1 to 3 Control Input To Status Latches V OC V OL R Sense Over Current R Sense Open Load Power GND AES02537 Figure 9 The Low-Side Driver Connection on the TLE 6208-3 G The output transistor MOUT, a power MOS (D-MOS) transistor, has an RDSON of typ. 0.8 at 25 C. Its source connection is linked to the Power-GND connection. The drain is connected with the open source of the highside switch to build the output OUT1 to OUT3. Two sense devices (transistor, resistor and comparator) are used to detect overloads and underloads. In the event of overcurrent, the gate voltage is also restricted. Following a specified dead time of typ. 25 s, the logic cuts off the output transistor, and stores the information "Overcurrent at Switch X" in the status register. It is possible to override the cut-off after 25 s by resetting the overcurrent ON/OFF bits. However, the current continues to be restricted. This function allows the power-on of e.g. lights, motors, and heavy capacitive loads, which have high inrush currents and relatively short conducting periods. Furthermore, delayed power-on allows the low-side drivers to be adapted to the switching times of the HS switch. For the halfbridge operation, this ensures that the HS switch is turned off before the LS switch starts to conduct (suppression of crossover current). In order to ensure reliable underload detection in the case of commutating, inductive loads, an identical underload dead time has been integrated for all channels (including the high-side switches). The timer for this dead time (typ. 350 s is started with the positive edge of the CSN. Explanation: All commutation processes start with this edge (e.g. to drive a motor in reverse mode), if inductance is present. Commutation processes Semiconductor Group 11 Application Note 1998-04-01 TLE 6208-3 G must be interpreted as underload by the underload detection system, since the current requires a finite period firstly to change the polarity and then to exceed the underload threshold. This dead time allows this "false information" to be suppressed, and its storage in the status register is prevented. 3.2 High-side Driver Like the LS driver, the high-side driver circuit shown in Figure 10 contains an overcurrent read-out, an undercurrent read-out and a current limit. Only the sense resistors are now in the drain branch. The comparator inputs therefore have supply voltage VS as a fixed reference potential. The signal processing which takes place in logic is similar to that of the LS switch. However, gate control is now supplied by the internal charge pump voltage VCP, which is approx. 12 V higher than VS. The start-up configuration of the TLE 6208-3 G also ensures that no uncontrolled switching of the output levels occurs in the whole of the undervoltage range for VS and VCC. All output transistors are switched to tristate status. The functional range of the supply voltages is therefore specified up to 0 V. V CHP HS-Driver 1 MOC Control Input R Sense Over Current MOL R Sense Open Load MOUT VS To Status Latches Gate Status Over Current Open Load HS-Driver 2 Current Limit OUT 1 to 3 25 s Delay V OC + To Drain of Lowside Switch V OL + AES02538 Figure 10 The High-Side Driver Circuit on the TLE 6208-3 G The most important data for the output drivers is summarized again in Table 1. Semiconductor Group 12 Application Note 1998-04-01 TLE 6208-3 G Table 1 Parameter The Main Parameters of the Output Drive Symbol min. Value for TJ = - 40 to 150 C typ. @25 C max. 0.8 0.75 -2 150 1.3 28 2.4 30 2.0 2.0 - 500 2.0 40 5.0 60 A A A s A mA - - - 50 - 1.0 10 - 15 Unit ON resistance Tristate leakage current Shut down current threshold Shut down dead time Current limit Open circuit/Underload detection current threshold Open circuit/Underload dead time RDSONH RDSONL IQLH IQLL ISD tDSD IOCL IOCD tDOC 200 370 500 s Semiconductor Group 13 Application Note 1998-04-01 TLE 6208-3 G 4 Programming the TLE 6208-3 G The SPI interface is used to control the module or read out the status word. Figure 11 shows a typical read/write cycle in the form of an oscillogram. CH1 CH2 RF1 RF2 RF3 RF4 CSN CH2gnd CLK RF3gnd DI RF4gnd DO Previous Status CH1gnd VOUTL1 V 10 Bit 1 = Low-side SW1 ON Bit 13 = Overcurrent SD ON 5V 5V 5.00 V A 50 s 50 s 1.95 V CH2 AED02447 55.5 s = t dSD (overcurrent shut down delay time) 10.0 mV 50 s 5.00 V 50 s 5.00 V 50 s Bit 0 = Status Register Reset Bit 13 = Overcurrent detected t dSD 1.8 A 5 RF2gnd Bit 1 = L SW1 had been switched OFF by overcurrent protection OUTL1 A 2 1 Figure 11 TLE 6208-3 G Read/Write Cycle Read-in of the 16-bit long control word begins after the H-L edge of the CSN signal. Read-in of the control word at the DI input is synchronized with the CLK clock. The status word for the previous control word appears at the data output DO. When the CSN signal changes from L to H, the data which has been read in takes effect. The module is programmed. This is shown in Figure 11 where the two lower lines represent the voltage and the current of LS Switch 1 (was programmed with Bit 1 = H at power-on; Bit 0 = H has also been read in). After approx. 25 s the module cuts off the output because it is overloaded with more than 2 A, and Bit 13 = H (current cutoff active) was programmed at the same time. The exact timing is not detailed here. This data is specified in the TLE 6208-3 G Data Sheet. A special software has been developed to provide simple control of an application board. This can be run under Windows(R) on any standard PC. The printer interface LPT1 or LPT2 can be used as an "SPI interface with inhibit". Further details are provided below. Table 2 and Table 3 show the allocation of functions and switches to the control and diagnostics word. Semiconductor Group 14 Application Note 1998-04-01 TLE 6208-3 G 4.1 Table 2 Bit 15 Control Word The TLE 6208-3 G Control Word 14 13 Overcurrent SD on/off 12 11 10 9 8 7 6 5 4 3 2 1 0 Status Register Reset OVLO on/off HS-Switch 3 HS-Switch 2 HS-Switch 1 LS-Switch 3 LS-Switch 2 H = ON L = OFF Details are as follows: * Bit 0: Status Register Reset Bit 0 Bit 0 Bit 1 Bit 1 Bit 6 Bit 6 =L All data remains stored in the status register. = H The status register is reset after every programming cycle. =L LS Switch 1 OFF ON OFF ON * Bit 1 to 6: Driver Control = H LS Switch 1 =L HS Switch 3 and so on until = H HS Switch 3 * Bit 7 to 12: Not Used * Bit 13: Overcurrent Lockout Bit 13 Bit 13 =L Overcurrent lockout after 25 s is not active; the current is limited to typ. 3 A. = H Overcurrent lockout after 25 s is active. * Bit 14: Not Used * Bit 15: Overvoltage Lockout Bit 15 Bit 15 =L Overvoltage lockout (OVLO) is not active. The module can be operated up to VS = 40 V. = H Overvoltage lockout is active. All outputs are cut off if VS = min. 34 V. Semiconductor Group 15 Application Note 1998-04-01 LS-Switch 1 not used not used not used not used not used not used not used TLE 6208-3 G 4.2 Table 3 Bit 15 Power Supply fail Status Word The TLE 6208-3 G Status Word 14 13 12 11 10 9 8 7 6 Status HS-Switch 3 5 Status LS-Switch 3 4 Status HS-Switch 2 3 Status LS-Switch 2 2 Status HS-Switch 1 1 Status LS-Switch 1 0 Temp. Prewarning Underload Overload not used not used not used not used not used 16 High Means Switch is ON Low Means Switch is OFF The status word transmits the following information: * Bit 0: Overtemperature Prewarning If the chip temperature rises above typ. Tj = 145 C, then Bit 0 is set to H. The information is stored in the status register. At typ. Tj = 175 C, all output levels are cut off (emergency off). The data remains stored in all registers. If the chip temperature drops below typ. Tj = 125 C, then Bit 0 is set to L. The information in the status register is overwritten (all-clear). * Bits 1 to 6: ON/OFF Status Indicator of the Driver Levels Status bits of the switches; assigned in the same way as the control word. This has the advantage that a simple EX-OR comparison of the control and status word after two read-ins is sufficient to check the transmission path and the application. The driver status is inserted in the status word. Analysis is performed by measuring the gate voltage at the output transistors. L means: H means: Output level is deactivated (inhibited) Output level is active (conducting) * Bit 7 to 12: Not Used Semiconductor Group not used Application Note 1998-04-01 TLE 6208-3 G * Bit 13: Overload/Short-Circuit Indicator "Overload" information is output here. H means that one or more of the 6 switches is or was overloaded. Status Bits 1 to 6 can be used to identify the switch concerned. * Bit 14: Underload/Broken Wire Indicator "Underload" information is output here. H means that underload has been detected on one or more of the 6 switches. The exact identification of the switch concerned is likewise given by status bits 1 to 6. * Bit 15: Supply Voltage Fault "Overvoltage or undervoltage at VS" information is output here. H means that overvoltage or undervoltage has been or is still being detected at VS. Overvoltage is also indicated if Bit 15 of the control word has been set to L (OVLO not active). All information is stored, unless Bit 0 of the control word is set and a new control cycle has been initiated (see Bit 0 of the control word). In the same way, the status register is deleted by turning VCC on or off, or by deactivating the IC via the inhibit input (INH = L). Semiconductor Group 17 Application Note 1998-04-01 TLE 6208-3 G 5 Applications The following section is concerned with possible applications of the IC. The most important information is the pin configuration (pinning) and the package dimensions, and these are shown in Figure 12 and Figure 13. P-DSO-14-4 GND OUT 3 1 2 3 4 5 6 7 Chip Leadframe 14 GND 13 OUT 1 12 OUT 2 11 V CC 10 INH 9 DO 8 GND AEP02438 VS CSN DI CLK GND Figure 12 : TLE 6208-3 G Pinning Legend GND OUT Ground Output Power supply voltage 5V Supply Data Input Data Output Clock Input Chip-Select-Not Input Inhibit VS VCC DI DO CLK CSN INH Semiconductor Group 18 Application Note 1998-04-01 TLE 6208-3 G 0.35 x 45 1.75 max 1.45 -0.2 0.19 +0.06 0.2 -0.1 4 -0.2 1) 1.27 0.35 +0.15 2) 14 0.1 0.2 14x 6 0.2 8 0.4 +0.8 1 7 1) 8.75 -0.2 Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.05 max. per side GPS05093 Figure 13 TLE 6208-3 G Package Diagram The 4 connections of the serial interfaces (DI, DO, CLK and CSN) and the inhibit input are located close to each other from pin 4 to 10. The power supply and the output stages are located in the upper section of the device from pin 1 to 3 and 12 to 14. This considerably simplifies PCB design. In order to use the PCB as a heat sink, as many copper-covered surfaces as possible should be located beside the GND connections, especially at pin 1 and pin 14. Thermal resistance can also be significantly reduced by using termal wire holes in combination with a double side PCB with 70 m power copper layers next to the IC. Of the wide range of possible applications, the one shown in Figure 14 and featuring a series of two motors which are required e.g. for vehicle mirror positioning. Quasi-synchronous control of the two motors can be achieved via software, although only one motor is driven at any time, in a sort of time-multiplexing operation. The dissipated power is limited to very low values in this way. Semiconductor Group 19 Application Note 1998-04-01 8 max. TLE 6208-3 G Watchdog Reset Q D TLE 4278G D01 1N4001 D02 Z39 V S = 12V CQ 22 F V CC CD 47 nF V CC 11 Bias CS 10 F WD R VS DRV1 2 Charge Pump 13 OUT 1 INH 10 Inhibit FaultDetect M CSN 4 DI 5 P CLK 6 DO 9 SPI 16 Bit Logic and Latch DRV2 12 OUT 2 M UV OV TSD >1 DRV3 2 OUT 3 1,7,8,14 GND GND AEB02441 Figure 14 Application Circuit with TLE 6208-3 G and TLE 4278 G for Mirror Positioning Semiconductor Group 20 Application Note 1998-04-01 TLE 6208-3 G The Siemens low-drop voltage regulator TLE 4278 G can be used for the VCC power supply. It has additional functions such as reset and watchdog for integrated controller management, features excellent EMC stability and is also available in a P-DSO-14 package. If this voltage regulator does not meet the application requirements, there is a wide range of different Siemens low-drop voltage regulators available. The external circuitry of the TLE 6208-3 G is very simple, because e.g. pull-up, pull-down resistors or freewheeling diodes are already integrated. Only one blocking capacitor CS to VS and one diode for the reverse-polarity protection are needed. The capacitor CS has to store any reverse inductive energy, because the diode prevents the current flow back to the power supply. For this reason CS should not be too small. If a Zener diode of e.g. 36 V is connected from VS to GND then this rule no longer applies. CS can be considerably smaller in this case (a few F). The slew rate of the supply voltage dVS/dt is now the determining parameter. CS should be selected so that dVS/dt remains clearly below 10 V/s. High power-on peak currents frequently occur in these applications. These may be up to an order of magnitude higher than the rated current. The TLE 6208-3 G can switch load currents of up to 3 A per channel if the overcurrent lockout has been deactivated by setting Bit 13 to L. Once the power-on procedure has been completed, the overcurrent lockout can be reactivated via software control (Bit 13 to H), in order to protect the load (blocked motor etc.) and the IC against overload. If the current now rises above the cutoff threshold of typ. ISD = 1.5 A during nominal operation, then the channel is disconnected after a dead time of typ. tDSD = 25 s. Figure 11 shows a typical cutoff process: Shortly after the CSN control signal changes from L to H, the OUTL1 output is switched to overload and disconnected after the time tDSD. The VS operating voltage range can be extended up to 40 V by setting the overvoltage Bit 15 to L. This therefore satisfies all the main industrial requirements. 6 Application Board and Control Software For the purposes of laboratory testing and as a development system, an application board is available with various loads switched by a TLE 6208-3 G, together with Windows(R) control software. Application Board Configuration * 2 motors in series or * Three sockets directly connected to the outputs for individual loads * Test switches to demonstrate the diagnostic features if openload, short circuit of load, short circuit to the supply voltage or short circuit to ground occurs. Figure 15 shows the schematic circuit diagram and Figure 16 shows the associated PCB for the application board. Semiconductor Group 21 Application Note 1998-04-01 Off Power +V S Ground On Power On 1k5 Figure 15 2 3 TLE 4268 1 5 8 1N4001 ZPD38 22 F 100 nF 100 nF 10 F To Computer Parallel Port Semiconductor Group V CC INH 10 13 Motor M CSN 5 Motor M 2 1,7,8,14 Motor OUT 3 Socket CW 1k5 CCW 1k5 OUT 1 OUT 2 OUT 3 High CBV2 1 k Low 1 k High 1 k Low 1 k High 1 k Low 1 k CW 1k5 CCW 1k5 9 11 OUT 1 3 DO Socket 47 nF VS OUT 3 OUT 2 OUT 1 Short Circuit to Ground or +V S 10 k Pin 8 INH Pin 12 DO BV2 OUT 2 Socket 1 k Schematic Circuit Diagram of the TLE 6208-3G Application Board TLE 6208-3 12 CLK 6 4 DI 22 CSN-Code Pin 7 Pin 6 Pin 5 Pin 4 CSN 4 CSN 3 CSN 2 CSN 1 10 k 10 k Pin 3 CLK 10 k Pin 2 DI TLE 6208-3 G Application Note 1998-04-01 CBV2 AEB02540 TLE 6208-3 G OUT 1 Short Circuit to Data-Connector OUT CSN1 GND CSN4 CSN +VS OUT 2 +VS OUT 3 +VS Data-Connector IN C+ 100 F D DI CLK DO Z39 INH D Z68 C 22 F + +VS CSN Code GND GND OUT 1 Motor Socket TLE 6208-3G Demoboard OUT 2 Motor Socket CCW CW High Low OUT 3 Motor Socket OUT 1 High Low + GND TLE 6208-3G D 9.2 V High OUT 2 Low C 22 F Power ON OFF D Power ON CCW CW Motor-Rotation OUT 3 Motor Motor OUT 1 OUT 2 OUT 3 8.2 V HL PS TM3 OUT 1/2 Short Circuit OUT 2/3 AES02539 Figure 16 Layout of the TLE 6208-3G Application Board The standard parallel interface on a PC is used to control and read the status word. Software running under Windows allows the simple definition of macros, which can be combined to create a sequence program. The standard screen masks are shown in Figure 17. Semiconductor Group 23 Application Note 1998-04-01 TLE 6208-3 G Figure 17 Standard Masks for the TLE 6208-3 G Control Software The control software can address four boards via corresponding chip select lines. A small bus system can easily be constructed in this way. The complete system can be disconnected via the INH button on the PC. The only additional hardware required is a 12 V supply voltage and a standard PC with a printer interface. The documentation supplied with the application board contains lots of additional information to provide a better understanding of the IC. The application board and the control software can be obtained from Siemens sales offices. Semiconductor Group 24 Application Note 1998-04-01 TLE 6208-3 G 7 Order No.: Further Information TLE 6208-3 on request Data sheets and further information are available on the latest semiconductor CD ROM and on the World Wide Web at: http://www.siemens.de/Semiconductor/products/36/36.htm or from our sales offices. Semiconductor Group 25 Application Note 1998-04-01 |
Price & Availability of TLE6208-3G |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |